Realization of an all-optical comparator using beam interference inside photonic crystal waveguides.

Using optical beam interference inside photonic-crystal-based waveguides is a promising method for designing and realizing all-optical logic gates and other digital devices. In this paper we design and propose an all-optical 1-bit comparator using optical beam interference. In the proposed structure, the logic states of input ports are determined based on their initial phases. The 180 deg and 0 deg phases are used as logic 0 and 1. However, the logic states of the output ports are determined based on the amplitude of the optical signal at the output ports. For the proposed structure, the maximum rise and fall times are about 0.6 ps and 0.3 ps, respectively.

Fabrication of ZnO@Ag@Ag3PO4 Ternary Heterojunction: Superhydrophilic Properties, Antireflection and Photocatalytic Properties.

A ZnO seed layer was formed on the fluorine-doped tin oxide substrate by magnetron sputtering, and then a ZnO nanorod was grown on the ZnO seed layer by a hydrothermal method. Next, we prepared a single-crystal Ag seed layer by magnetron sputtering to form a ZnO@Ag composite heterostructure. Finally, Ag3PO4 crystals were grown on the Ag seed layer by a stepwise deposition method to obtain a ZnO@Ag@Ag3PO4 ternary heterojunction. The composite heterostructure of the material has super strong hydrophilicity and can be combined with water-soluble pollutants very well. Besides, it has excellent anti-reflection performance, which can absorb light from all angles. When Ag exists in the heterojunction, it can effectively improve the separation of photo-generated electrons and holes, and improve the photoelectric conversion performance. Based on the above characteristics, this nano-heterostructure can be used in the fields of solar cells, sensors, light-emitting devices, and photocatalysis.

Fabrication of ZnO@MoS2 Nanocomposite Heterojunction Arrays and Their Photoelectric Properties.

In this paper, ZnO@MoS2 core-shell heterojunction arrays were successfully prepared by the two-step hydrothermal method, and the growth mechanism was systematically studied. We found that the growth process of molybdenum disulfide (MoS2) was sensitively dependent on the reaction temperature and time. Through an X-ray diffractometry (XRD) component test, we determined that we prepared a 2H phase MoS2 with a direct bandgap semiconductor of 1.2 eV. Then, the photoelectric properties of the samples were studied on the electrochemical workstation. The results show that the ZnO@MoS2 heterojunction acts as a photoanode, and the photocurrent reaches 2.566 mA under the conditions of 1000 W/m2 sunshine and 0.6 V bias. The i-t curve also illustrates the perfect cycle stability. Under the condition of illumination and external bias, the electrons flow to the conduction band of MoS2 and flow out through the external electrode of MoS2. The holes migrate from the MoS2 to the zinc oxide (ZnO) valence band. It is transferred to the external circuit through the glass with fluorine-doped tin oxide (FTO) together with the holes on the ZnO valence band. The ZnO@MoS2 nanocomposite heterostructure provides a reference for the development of ultra-high-speed photoelectric switching devices, photodetector(PD) devices, and photoelectrocatalytic technologies.